A comparative study of the radiation properties of SiC in respect to silicon and diamond

Silicon carbide represents a class of semiconductors, due to its polytypism. Besides its properties of interest for semiconductor devices, sometimes better than silicon and diamond, it is supposed to have a good radiation tolerance. In the present work, the bulk degradation of SiC in hadron fields (pions and protons), in the energy range between 100 MeV and 10 GeV has been estimated theoretically: the nuclear stopping power and the concentration of primary defects. The results are compared to the similar ones corresponding to diamond and silicon. PACS: 61.80.Az: Theory and models of radiation effects. 61.82.-d: Radiation effects on specific materials.